‘’APPROXIMATION OF DEVELOPMENT DEVIATION OF ENERGETIC RAM MEMORY DESIGN’’

VIVEK DUBEY; AMIT SHHIVHARE

VOLUME02ISSUE10

ABSRACT

Some of the factors contributive to the variability increase square measure elementary to the tabular CMOS semiconductor device design. Random dopant fluctuations (RDFs) and line edge roughness (LER) square measure 2 samples of such intrinsic sources of variation. Alternative reasons for the variability increase square measure the advanced resolution enhancement techniques (RETs) needed to print lithography. New materials and performance enhancement techniques add further sources of variation. Finally, the transition to 300-mm wafers will increase the impact of a cross-wafer non uniformity. This paper describes Associate in nursing economic infrastructure for characterizing the numerous varieties of variation in semiconductor device characteristics. A sample of results obtained from applying this infrastructure to variety of technologies at the 90nm, 65nm, and 45nm nodes is given. This paper then illustrates the impact of the determined variability of DRAM on and digital circuit blocks used in system-on-chip styles. totally different approaches for minimizing semiconductor device variation and mitigating its impact on product performance and yield are delineate. With this approach this may offer the whole layout implementation of DRAM cell. From that it’s conjointly clear that the circuit that is style in schematic has physical liableness as per as chip implementation is concern.

KEYWORDS

Energetic RAM, Memory design, Line-Edge Roughness (LER), Random Dopant        Fluctuations (RDFs), Resolution-Enhancement Techniques (RETs).

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AUTHOR’S AFFILIATION

VIVEK DUBEY

Department of Electrical Eng., Science and Research Branch

AMIT SHHIVHARE

Department of Electrical Eng., Faculty of Eng

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